2010. 12. 3 1/7 semiconductor technical data kf9n25p/f n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time,low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converters and switching mode power supplies. features h v dss = 250v, i d = 9.0a h drain-source on resistance : r ds(on) =0.4 ? @v gs = 10v h qg(typ) = 14.5nc maximum rating (ta=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit kf9n25p KF9N25F drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 9.0 9.0* a @t c =100 ? 5.65 5.65* pulsed (note1) i dp 25 25* single pulsed avalanche energy (note 2) e as 180 mj repetitive avalanche energy (note 1) e ar 4.0 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 83 38 w derate above 25 ? 0.67 0.3 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.5 3.3 ? /w thermal resistance, junction-to- ambient r thja 62.5 62.5 ? /w g d s pin connection dim millimeters to-220ab 1.46 a bc d e f gh j k m no 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.050.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate2. drain 3. source 12 3 kf9n25p to-220is (1) a a b b c c d d e e f f g g h h 1.47 max1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. gate2. drain 3. source * single gauge lead frame KF9N25F (kf9n25p, KF9N25F) downloaded from: http:///
2010. 12. 3 2/7 kf9n25p/f revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 250 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.22 - v/ ? drain cut-off current i dss v ds =250v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =4.5a - 0.31 0.40 ? dynamic total gate charge q g v ds =200v, i d =9a v gs =10v (note4,5) - 14.5 - nc gate-source charge q gs - 3.2 - gate-drain charge q gd - 6.3 - turn-on delay time t d(on) v dd =125v i d =9a r g =25 ? (note4,5) - 15 - ns turn-on rise time t r - 25 - turn-off delay time t d(off) - 30 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 560 - pf output capacitance c oss - 96 - reverse transfer capacitance c rss - 15 - source-drain diode ratings continuous source current i s v gs 2010. 12. 3 3/7 kf9n25p/f revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 41 0 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.21.1 1.0 05 0 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 1.20.4 0 0.2 0.6 1.00.8 01 6 82 4 12 42 0 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.02.5 1.0 1.5 2.0 c v gs =10v i ds = 4.5a v gs = 0v i ds = 250 25 c 11 0 0 0.1 10 0.1 1 10 100 v gs =10v v gs =7v v gs =10v v gs =7v v ds =30v 25 c t c =100 c t c =100 c v gs =5v downloaded from: http:///
2010. 12. 3 4/7 kf9n25p/f revision no : 0 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 2 10 4 10 3 10 2 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 drain current i d (a) drain - source voltage v ds (v) fig10. safe operation area 0 62 4 1210 8 75 150 125 50 100 25 drain current i d (a) (kf9n25p) c junction temperature t j ( ) fig11. i d - t j t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) 10 1 10 2 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 t c = 25 t j = 150 single pulse c c dc 10ms 1ms operation in this area is limited by r ds(on) (KF9N25F) 100 s gate - charge q g (nc) 0 1210 62 4 8 14 16 6 2 10 8 12 4 0 fig8. q g - v gs gate - source voltage v gs (v) i d =9a fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 5 15 25 35 10 20 30 40 c rss c oss c iss v ds = 200v 10 s downloaded from: http:///
2010. 12. 3 5/7 kf9n25p/f revision no : 0 time (sec) fig12. transient thermal response curve transient thermal resistance time (sec) fig13. transient thermal response curve transient thermal resistance (KF9N25F) - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm s ingl e pulse duty=0.5 0.02 0.05 0.1 0.2 0. 01 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -5 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 -1 10 0 10 -2 10 -1 10 -1 10 0 10 1 10 -4 (kf9n25p) - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm singl e pulse duty=0. 5 0.02 0.05 0.1 0.2 0.01 downloaded from: http:///
2010. 12. 3 6/7 kf9n25p/f revision no : 0 fig14. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig16. resistive load switching fig15. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2010. 12. 3 7/7 kf9n25p/f revision no : 0 fig17. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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